Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor

This work reports the effect of doping concentration on energy-band structure semiconductor materials. The research focuses resultant values bandgap energy and its depletion region (length/area), based initial concentrations which are donors acceptors. diagram is simulated by initializing various materials’ properties Gallium Nitride (GaN) Arsenide (GaAs), solving Poisson’s equation derived from Maxwell’s equation. solved applying finite difference method (FDM) using Newton-Raphson method. Both these materials compared with different (1x1013cm-3-1x1017cm-3). Taking GaAs as controlled variable, band validated literature findings. measured gap GaN changes 1.5215eV to 7.6689eV, GaAs, 1.1330eV 5.6431eV. It increases proportion increments. However, when obtaining both spatial active regions for it reduce (1.9990μm-0.0790μm)x1μm2 (1.9990μm-0.0890μm)x1μm2 respectively. findings show structure. Thus, numerical system expected be used determination internal quantum efficiency, output spectrum light-emitting diode (LED) chip.